MJD2955-1G Bipolar Transistor

Characteristics of MJD2955-1G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -70 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-251
  • Electrically Similar to the Popular MJE2955T transistor
  • The MJD2955-1G is the lead-free version of the MJD2955-1 transistor

Pinout of MJD2955-1G

Here is an image showing the pin diagram of this transistor.

Marking

The MJD2955-1G transistor is marked as "J2955G".

Replacement and Equivalent for MJD2955-1G transistor

You can replace the MJD2955-1G with the MJD2955-1.
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