MJ15022G Bipolar Transistor

Characteristics of MJ15022G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 200 V
  • Collector-Base Voltage, max: 350 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 16 A
  • Collector Dissipation: 250 W
  • DC Current Gain (hfe): 15 to 60
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ15022G is the lead-free version of the MJ15022 transistor

Pinout of MJ15022G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJ15022G is the MJ15023G.

Replacement and Equivalent for MJ15022G transistor

You can replace the MJ15022G with the MJ15022, MJ15024 or MJ15024G.
If you find an error please send an email to mail@el-component.com