M8550-B Bipolar Transistor

Characteristics of M8550-B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 80 to 160
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of M8550-B

The M8550-B is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The M8550-B transistor can have a current gain of 80 to 160. The gain of the M8550 will be in the range from 80 to 300, for the M8550-C it will be in the range from 120 to 200, for the M8550-D it will be in the range from 160 to 300.

SMD Version of M8550-B transistor

The MMBT3702 (SOT-23) is the SMD version of the M8550-B transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for M8550-B transistor

You can replace the M8550-B with the 2SB564A, KSB564A, MPS6651, MPS6651G, MPS6652, MPS6652G, MPS750, MPS750G, MPSW51, MPSW51A, MPSW51AG or MPSW51G.
If you find an error please send an email to mail@el-component.com