M28S-C Bipolar Transistor

Characteristics of M28S-C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 20 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 500 to 700
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of M28S-C

The M28S-C is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The M28S-C transistor can have a current gain of 500 to 700. The gain of the M28S will be in the range from 300 to 1000, for the M28S-B it will be in the range from 300 to 550, for the M28S-D it will be in the range from 650 to 1000.

Replacement and Equivalent for M28S-C transistor

You can replace the M28S-C with the MPS650, MPS650G, MPS6601, MPS6601G, MPS6602, MPS6602G, MPSW01, MPSW01A, MPSW01AG, MPSW01G or ZTX689B.
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