KTD1146O Bipolar Transistor

Characteristics of KTD1146O Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 20 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 120 to 240
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of KTD1146O

The KTD1146O is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTD1146O transistor can have a current gain of 120 to 240. The gain of the KTD1146 will be in the range from 120 to 700, for the KTD1146GR it will be in the range from 350 to 700, for the KTD1146Y it will be in the range from 200 to 400.
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