KTA1040L-GR Bipolar Transistor

Characteristics of KTA1040L-GR Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 150 to 300
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-251

Pinout of KTA1040L-GR

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTA1040L-GR transistor can have a current gain of 150 to 300. The gain of the KTA1040L will be in the range from 100 to 300, for the KTA1040L-Y it will be in the range from 100 to 200.

SMD Version of KTA1040L-GR transistor

The BDP950 (SOT-223) is the SMD version of the KTA1040L-GR transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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