KSC815C Bipolar Transistor

Characteristics of KSC815C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.2 A
  • Collector Dissipation: 0.4 W
  • DC Current Gain (hfe): 40 to 400
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of KSC815C

The KSC815C is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads. Suffix "C" means center collector in KSC815.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSC815C transistor can have a current gain of 40 to 400. The gain of the KSC815CG will be in the range from 200 to 400, for the KSC815CO it will be in the range from 70 to 140, for the KSC815CR it will be in the range from 40 to 80, for the KSC815CY it will be in the range from 120 to 240.

Complementary PNP transistor

The complementary PNP transistor to the KSC815C is the KSA539C.

Replacement and Equivalent for KSC815C transistor

You can replace the KSC815C with the KSC1008C.
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