KSC1009CR Bipolar Transistor

Characteristics of KSC1009CR Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 140 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 0.7 A
  • Collector Dissipation: 0.8 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of KSC1009CR

The KSC1009CR is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads. Suffix "C" means center collector in KSC1009R.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSC1009CR transistor can have a current gain of 40 to 80. The gain of the KSC1009C will be in the range from 40 to 400, for the KSC1009CG it will be in the range from 200 to 400, for the KSC1009CO it will be in the range from 70 to 140, for the KSC1009CY it will be in the range from 120 to 240.

Complementary PNP transistor

The complementary PNP transistor to the KSC1009CR is the KSA709CG.
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