KD501 Bipolar Transistor
Characteristics of KD501 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 40 V
- Collector-Base Voltage, max: 40 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 20 A
- Collector Dissipation: 150 W
- DC Current Gain (hfe): 15
- Transition Frequency, min: 2 MHz
- Operating and Storage Junction Temperature Range: -50 to +155 °C
- Package: TO-3
Pinout of KD501
Replacement and Equivalent for KD501 transistor
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