FJX945G Bipolar Transistor

Characteristics of FJX945G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.15 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 300 MHz
  • Noise Figure, max: 4 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-323

Pinout of FJX945G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The FJX945G transistor can have a current gain of 200 to 400. The gain of the FJX945 will be in the range from 70 to 700, for the FJX945L it will be in the range from 350 to 700, for the FJX945O it will be in the range from 70 to 140, for the FJX945Y it will be in the range from 120 to 240.

Marking

The FJX945G transistor is marked as "SAG".

Complementary PNP transistor

The complementary PNP transistor to the FJX945G is the FJX733G.

Replacement and Equivalent for FJX945G transistor

You can replace the FJX945G with the 2SC4116 or 2SC4116-GR.
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