FJX945G Bipolar Transistor
Characteristics of FJX945G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 50 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.15 A
- Collector Dissipation: 0.2 W
- DC Current Gain (hfe): 200 to 400
- Transition Frequency, min: 300 MHz
- Noise Figure, max: 4 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-323
Pinout of FJX945G
Classification of hFE
Marking
Complementary PNP transistor
Replacement and Equivalent for FJX945G transistor
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