FJAF4210R Bipolar Transistor

Characteristics of FJAF4210R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -140 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 50 to 100
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of FJAF4210R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The FJAF4210R transistor can have a current gain of 50 to 100. The gain of the FJAF4210 will be in the range from 50 to 180, for the FJAF4210O it will be in the range from 70 to 140, for the FJAF4210Y it will be in the range from 90 to 180.

Complementary NPN transistor

The complementary NPN transistor to the FJAF4210R is the FJAF4310R.

Replacement and Equivalent for FJAF4210R transistor

You can replace the FJAF4210R with the 2SA1673, 2SA1673-O, 2SA1860, 2SA1860-O, 2SA1909 or 2SA1909-O.
If you find an error please send an email to mail@el-component.com