BDW51 Bipolar Transistor

Characteristics of BDW51 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 45 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 20 to 150
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of BDW51

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDW51 is the BDW52.

Replacement and Equivalent for BDW51 transistor

You can replace the BDW51 with the 2N6471, 2N6472, KD502 or KD503.
If you find an error please send an email to mail@el-component.com