BD433G Bipolar Transistor
Characteristics of BD433G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 22 V
- Collector-Base Voltage, max: 22 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 4 A
- Collector Dissipation: 36 W
- DC Current Gain (hfe): 40 to 130
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
Pinout of BD433G
Replacement and Equivalent for BD433G transistor
Equivalent
- TO-126 package, BD433: 36 watts
- TO-126 package, BD436: 36 watts
- TO-126 package, BD436G: 36 watts
- TO-126 package, BD439: 36 watts
- TO-126 package, BD442: 36 watts
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