BD433G Bipolar Transistor

Characteristics of BD433G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 22 V
  • Collector-Base Voltage, max: 22 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 36 W
  • DC Current Gain (hfe): 40 to 130
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD433G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for BD433G transistor

You can replace the BD433G with the 2N4921, 2N4921G, BD185, BD433, BD435, BD435G, MJE220, MJE221 or MJE222.

Equivalent

Same transistor is also available in:
  • TO-126 package, BD433: 36 watts
  • TO-126 package, BD436: 36 watts
  • TO-126 package, BD436G: 36 watts
  • TO-126 package, BD439: 36 watts
  • TO-126 package, BD442: 36 watts
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