BCW33 Bipolar Transistor
Characteristics of BCW33 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 32 V
- Collector-Base Voltage, max: 32 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 0.35 W
- DC Current Gain (hfe): 420 to 800
- Transition Frequency, min: 200 MHz
- Noise Figure, max: 4 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
Pinout of BCW33
Marking
Replacement and Equivalent for BCW33 transistor
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