BCP69-10 Bipolar Transistor
Characteristics of BCP69-10 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -20 V
- Collector-Base Voltage, max: -30 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1 A
- Collector Dissipation: 1.5 W
- DC Current Gain (hfe): 85 to 160
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-223
Pinout of BCP69-10
Complementary NPN transistor
Replacement and Equivalent for BCP69-10 transistor
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