BC877 Bipolar Transistor

Characteristics of BC877 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.8 W
  • DC Current Gain (hfe): 2000
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of BC877

The BC877 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BC877 is the BC878.

Replacement and Equivalent for BC877 transistor

You can replace the BC877 with the BC879.
If you find an error please send an email to mail@el-component.com