BC849 Bipolar Transistor

Characteristics of BC849 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 30 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 110 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1.2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BC849

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC849 transistor can have a current gain of 110 to 800. The gain of the BC849A will be in the range from 110 to 220, for the BC849B it will be in the range from 200 to 450, for the BC849C it will be in the range from 420 to 800.

Complementary PNP transistor

The complementary PNP transistor to the BC849 is the BC859.

Replacement and Equivalent for BC849 transistor

You can replace the BC849 with the 2SC3912, 2SC3913, 2SC3914, 2SC3915, BC847, BC848, BC850, FMMT619, FMMTA05, KST05, MMBTA05 or SMBTA05.
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