2SD826-G Bipolar Transistor

Characteristics of 2SD826-G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 20 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 280 to 560
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD826-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD826-G transistor can have a current gain of 280 to 560. The gain of the 2SD826 will be in the range from 120 to 560, for the 2SD826-E it will be in the range from 120 to 200, for the 2SD826-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD826-G might only be marked "D826-G".

Replacement and Equivalent for 2SD826-G transistor

You can replace the 2SD826-G with the 2SC3420, 2SC6101, 2SC6102, 2SD1685 or 2SD1685-G.
If you find an error please send an email to mail@el-component.com