2SD1624-R Bipolar Transistor

Characteristics of 2SD1624-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SD1624-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1624-R transistor can have a current gain of 100 to 200. The gain of the 2SD1624 will be in the range from 100 to 560, for the 2SD1624-S it will be in the range from 140 to 280, for the 2SD1624-T it will be in the range from 200 to 400, for the 2SD1624-U it will be in the range from 280 to 560.

Marking

The 2SD1624-R transistor is marked as "DGR".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1624-R is the 2SB1124-R.
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