2SD1257A-R Bipolar Transistor

Characteristics of 2SD1257A-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1257A-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1257A-R transistor can have a current gain of 60 to 120. The gain of the 2SD1257A will be in the range from 60 to 260, for the 2SD1257A-P it will be in the range from 130 to 260, for the 2SD1257A-Q it will be in the range from 90 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1257A-R might only be marked "D1257A-R".
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