2SD1220-Y Bipolar Transistor

Characteristics of 2SD1220-Y Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 150 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-251

Pinout of 2SD1220-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1220-Y transistor can have a current gain of 160 to 320. The gain of the 2SD1220 will be in the range from 60 to 320, for the 2SD1220-O it will be in the range from 100 to 200, for the 2SD1220-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1220-Y might only be marked "D1220-Y".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1220-Y is the 2SB905-Y.

SMD Version of 2SD1220-Y transistor

The FMMT625 (SOT-23) is the SMD version of the 2SD1220-Y transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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