2SD1211 Bipolar Transistor

Characteristics of 2SD1211 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 130 to 330
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SD1211

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1211 transistor can have a current gain of 130 to 330. The gain of the 2SD1211-R will be in the range from 130 to 220, for the 2SD1211-S it will be in the range from 185 to 330.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1211 might only be marked "D1211".

Replacement and Equivalent for 2SD1211 transistor

You can replace the 2SD1211 with the 2SC3332 or KSC1009C.
If you find an error please send an email to mail@el-component.com