2SC5359-R Bipolar Transistor

Characteristics of 2SC5359-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 230 V
  • Collector-Base Voltage, max: 230 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 180 W
  • DC Current Gain (hfe): 55 to 100
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SC5359-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC5359-R transistor can have a current gain of 55 to 100. The gain of the 2SC5359 will be in the range from 55 to 160, for the 2SC5359-O it will be in the range from 80 to 160.

Marking

The 2SC5359-R transistor is marked as "2SC5359-R".

Complementary PNP transistor

The complementary PNP transistor to the 2SC5359-R is the 2SA1987-R.
If you find an error please send an email to mail@el-component.com