2SC2682 Bipolar Transistor

Characteristics of 2SC2682 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 180 V
  • Collector-Base Voltage, max: 180 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 320
  • Transition Frequency, min: 200 MHz
  • Noise Figure, max: 4 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SC2682

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC2682 transistor can have a current gain of 100 to 320. The gain of the 2SC2682P will be in the range from 160 to 320, for the 2SC2682Q it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC2682 might only be marked "C2682".

Complementary PNP transistor

The complementary PNP transistor to the 2SC2682 is the 2SA1142.

Replacement and Equivalent for 2SC2682 transistor

You can replace the 2SC2682 with the 2SC1565A, 2SC2258, 2SC2912, 2SC3416, 2SC3417, 2SC3502, 2SC3503, 2SC3600, 2SC3601, 2SC3788, 2SC3789, 2SC3790, 2SC3955, 2SC3956, 2SD1610, BD127, BD128, BD129, KSC2258, KSC2258A, KSC2682, KSC3502 or KSC3503.
If you find an error please send an email to mail@el-component.com