2SC1096-M Bipolar Transistor

Characteristics of 2SC1096-M Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 50 to 100
  • Transition Frequency, min: 65 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-202

Pinout of 2SC1096-M

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC1096-M transistor can have a current gain of 50 to 100. The gain of the 2SC1096 will be in the range from 40 to 250, for the 2SC1096-K it will be in the range from 120 to 250, for the 2SC1096-L it will be in the range from 80 to 160, for the 2SC1096-N it will be in the range from 40 to 60.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC1096-M might only be marked "C1096-M".

Complementary PNP transistor

The complementary PNP transistor to the 2SC1096-M is the 2SA634-M.

Replacement and Equivalent for 2SC1096-M transistor

You can replace the 2SC1096-M with the 2SC1098, 2SC1098-M, 2SC1098A or 2SC1098A-M.
If you find an error please send an email to mail@el-component.com