2SB906-O Bipolar Transistor

Characteristics of 2SB906-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 9 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SB906-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB906-O transistor can have a current gain of 60 to 120. The gain of the 2SB906 will be in the range from 60 to 200, for the 2SB906-Y it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB906-O might only be marked "B906-O".

Complementary NPN transistor

The complementary NPN transistor to the 2SB906-O is the 2SD1221-O.
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