2SB552-BN Bipolar Transistor

Characteristics of 2SB552-BN Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -220 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 25 to 50
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of 2SB552-BN

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB552-BN transistor can have a current gain of 25 to 50. The gain of the 2SB552 will be in the range from 25 to 80, for the 2SB552-R it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB552-BN might only be marked "B552-BN".

Complementary NPN transistor

The complementary NPN transistor to the 2SB552-BN is the 2SD552-DN.

Replacement and Equivalent for 2SB552-BN transistor

You can replace the 2SB552-BN with the MJ15023, MJ15023G, MJ15025, MJ15025G, MJ21193, MJ21193G, MJ21195 or MJ21195G.
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