2SB1625 Bipolar Transistor

Characteristics of 2SB1625 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -110 V
  • Collector-Base Voltage, max: -110 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 5000 to 30000
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SB1625

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1625 transistor can have a current gain of 5000 to 30000. The gain of the 2SB1625-O will be in the range from 5000 to 12000, for the 2SB1625-P it will be in the range from 6500 to 20000, for the 2SB1625-Y it will be in the range from 15000 to 30000.

Equivalent circuit

2SB1625 equivalent circuit

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1625 might only be marked "B1625".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1625 is the 2SD2494.

Replacement and Equivalent for 2SB1625 transistor

You can replace the 2SB1625 with the 2SB1253, 2SB1254 or 2SB1255.
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