2SB1221-R Bipolar Transistor

Characteristics of 2SB1221-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -250 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.07 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 100 to 220
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SB1221-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1221-R transistor can have a current gain of 100 to 220. The gain of the 2SB1221 will be in the range from 60 to 220, for the 2SB1221-Q it will be in the range from 60 to 150.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1221-R might only be marked "B1221-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1221-R is the 2SC3941-R.

SMD Version of 2SB1221-R transistor

The BF623 (SOT-89) and BF823 (SOT-23) is the SMD version of the 2SB1221-R transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1221-R transistor

You can replace the 2SB1221-R with the 2SA1018, 2SA1018R, 2SA1370, 2SA1371, 2SA1624, 2SA1767, 2SA1767R, 2SA879, 2SA879-R or KTA1279.
If you find an error please send an email to mail@el-component.com