2SB1202 Bipolar Transistor

Characteristics of 2SB1202 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 100 to 560
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-251

Pinout of 2SB1202

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1202 transistor can have a current gain of 100 to 560. The gain of the 2SB1202-R will be in the range from 100 to 200, for the 2SB1202-S it will be in the range from 140 to 280, for the 2SB1202-T it will be in the range from 200 to 400, for the 2SB1202-U it will be in the range from 280 to 560.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1202 might only be marked "B1202".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1202 is the 2SD1802.

SMD Version of 2SB1202 transistor

The 2SB1123 (SOT-89) and 2SB1124 (SOT-89) is the SMD version of the 2SB1202 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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