2SB1123-T Bipolar Transistor
Characteristics of 2SB1123-T Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -50 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -2 A
- Collector Dissipation: 0.5 W
- DC Current Gain (hfe): 200 to 400
- Transition Frequency, min: 150 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-89
Pinout of 2SB1123-T
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SB1123-T transistor
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