2SA887-P Bipolar Transistor

Characteristics of 2SA887-P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -70 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 50 to 100
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-202

Pinout of 2SA887-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA887-P transistor can have a current gain of 50 to 100. The gain of the 2SA887 will be in the range from 50 to 220, for the 2SA887-Q it will be in the range from 80 to 160, for the 2SA887-R it will be in the range from 120 to 220.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA887-P might only be marked "A887-P".

Complementary NPN transistor

The complementary NPN transistor to the 2SA887-P is the 2SC1848-P.

SMD Version of 2SA887-P transistor

The BSR30 (SOT-89) and FMMT551 (SOT-23) is the SMD version of the 2SA887-P transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA887-P transistor

You can replace the 2SA887-P with the 2SA636A or 2SA636A-M.
If you find an error please send an email to mail@el-component.com