2SA1376A Bipolar Transistor

Characteristics of 2SA1376A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 135 to 400
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1376A

The 2SA1376A is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1376A transistor can have a current gain of 135 to 400. The gain of the 2SA1376A-K will be in the range from 200 to 400, for the 2SA1376A-L it will be in the range from 135 to 270.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1376A might only be marked "A1376A".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1376A is the 2SC3478A.

SMD Version of 2SA1376A transistor

The BF623 (SOT-89) and BF823 (SOT-23) is the SMD version of the 2SA1376A transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1376A transistor

You can replace the 2SA1376A with the KTA1279.
If you find an error please send an email to mail@el-component.com