2SA1369-H Bipolar Transistor

Characteristics of 2SA1369-H Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -20 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 600 to 1200
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SA1369-H

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1369-H transistor can have a current gain of 600 to 1200. The gain of the 2SA1369 will be in the range from 400 to 1200, for the 2SA1369-G it will be in the range from 400 to 800.

Marking

The 2SA1369-H transistor is marked as "GH".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1369-H is the 2SC3439-H.

Replacement and Equivalent for 2SA1369-H transistor

You can replace the 2SA1369-H with the 2STF2340.
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