2SA1358-O Bipolar Transistor

Characteristics of 2SA1358-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 80 to 160
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126F

Pinout of 2SA1358-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1358-O transistor can have a current gain of 80 to 160. The gain of the 2SA1358 will be in the range from 80 to 240, for the 2SA1358-Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1358-O might only be marked "A1358-O".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1358-O is the 2SC3421-O.

SMD Version of 2SA1358-O transistor

The 2SA1201 (SOT-89), 2SA1201-O (SOT-89), KTA1661 (SOT-89) and KTA1661O (SOT-89) is the SMD version of the 2SA1358-O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1358-O transistor

You can replace the 2SA1358-O with the 2SA1021, 2SA1184, 2SA1184-O, 2SA1220, 2SA1220A, 2SA1408, 2SA795, 2SA795A, 2SB631K, 2SB649, 2SB649A, KSA1220, KSA1220A or KTA1700.
If you find an error please send an email to mail@el-component.com