Characteristics of 2SA1319-R Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -160 V
- Collector-Base Voltage, max: -180 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -0.7 A
- Collector Dissipation: 0.7 W
- DC Current Gain (hfe): 100 to 200
- Transition Frequency, min: 120 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Pinout of 2SA1319-R
The 2SA1319-R is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.
Classification of hFE
The 2SA1319-R transistor can have a current gain of
100 to
200. The gain of the
2SA1319 will be in the range from
100 to
400, for the
2SA1319-S it will be in the range from
140 to
280, for the
2SA1319-T it will be in the range from
200 to
400.
Marking
Sometimes the "2S" prefix is not marked on the package - the 2SA1319-R might only be marked "
A1319-R".
Complementary NPN transistor
The complementary
NPN transistor to the 2SA1319-R is the
2SC3332-R.
SMD Version of 2SA1319-R transistor
The
KST93 (SOT-23) is the SMD version of the 2SA1319-R transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
Replacement and Equivalent for 2SA1319-R transistor
You can replace the 2SA1319-R with the
2SA1013,
2SA1013O,
2SA1275,
2SA1275-O,
KSA1013,
KSA1013O,
KTA1275 or
KTA1275O.
If you find an error please send an email to mail@el-component.com