2SA1292-R Bipolar Transistor

Characteristics of 2SA1292-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SA1292-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1292-R transistor can have a current gain of 100 to 200. The gain of the 2SA1292 will be in the range from 70 to 280, for the 2SA1292-Q it will be in the range from 70 to 140, for the 2SA1292-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1292-R might only be marked "A1292-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1292-R is the 2SC3256-R.

Replacement and Equivalent for 2SA1292-R transistor

You can replace the 2SA1292-R with the BD246A, BD246B, BD246C, BD250A, BD250B, BD250C or TIP36CA.
If you find an error please send an email to mail@el-component.com