2SA1287-G Bipolar Transistor

Characteristics of 2SA1287-G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 400 to 800
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SA1287-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1287-G transistor can have a current gain of 400 to 800. The gain of the 2SA1287 will be in the range from 400 to 800.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1287-G might only be marked "A1287-G".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1287-G is the 2SC3247-H.

SMD Version of 2SA1287-G transistor

The 2SA1518 (SOT-23), 2SA1519 (SOT-23), 2SA1520 (SOT-23), 2SA1521 (SOT-23), FMMTA55 (SOT-23), KST55 (SOT-23), MMBTA55 (SOT-23), PZTA55 (SOT-223) and SMBTA55 (SOT-23) is the SMD version of the 2SA1287-G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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