2N706B Bipolar Transistor
Characteristics of 2N706B Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 15 V
- Collector-Base Voltage, max: 25 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.05 A
- Collector Dissipation: 1 W
- DC Current Gain (hfe): 20 to 60
- Transition Frequency, min: 200 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-18
Pinout of 2N706B
SMD Version of 2N706B transistor
Replacement and Equivalent for 2N706B transistor
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