2N6729 Bipolar Transistor
Characteristics of 2N6729 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -2 A
- Collector Dissipation: 2 W
- DC Current Gain (hfe): 50 to 250
- Transition Frequency, min: 50 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-237
Pinout of 2N6729
Complementary NPN transistor
SMD Version of 2N6729 transistor
Replacement and Equivalent for 2N6729 transistor
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