2N6716 Bipolar Transistor
Characteristics of 2N6716 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 2 A
- Collector Dissipation: 2 W
- DC Current Gain (hfe): 50 to 250
- Transition Frequency, min: 50 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-237
Pinout of 2N6716
Complementary PNP transistor
SMD Version of 2N6716 transistor
Replacement and Equivalent for 2N6716 transistor
If you find an error please send an email to mail@el-component.com