2N6675 Bipolar Transistor
Characteristics of 2N6675 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 400 V
- Collector-Base Voltage, max: 650 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 15 A
- Collector Dissipation: 175 W
- DC Current Gain (hfe): 3 to 10
- Transition Frequency, min: 50 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
Pinout of 2N6675
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