2N6609 Bipolar Transistor
Characteristics of 2N6609 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -140 V
- Collector-Base Voltage, max: -160 V
- Emitter-Base Voltage, max: -7 V
- Collector Current − Continuous, max: -16 A
- Collector Dissipation: 150 W
- DC Current Gain (hfe): 15 to 60
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
Pinout of 2N6609
Complementary NPN transistor
Replacement and Equivalent for 2N6609 transistor
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