2N6559 Bipolar Transistor
Characteristics of 2N6559 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 350 V
- Collector-Base Voltage, max: 350 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 40 to 180
- Transition Frequency, min: 200 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-202
Pinout of 2N6559
If you find an error please send an email to mail@el-component.com