2N6559 Bipolar Transistor

Characteristics of 2N6559 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 350 V
  • Collector-Base Voltage, max: 350 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 40 to 180
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-202

Pinout of 2N6559

Here is an image showing the pin diagram of this transistor.
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