2N6430 Bipolar Transistor

Characteristics of 2N6430 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 200 V
  • Collector-Base Voltage, max: 200 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 50 to 200
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-18

Pinout of 2N6430

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N6430 is the 2N6432.

SMD Version of 2N6430 transistor

The KST43 (SOT-23) is the SMD version of the 2N6430 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2N6430 transistor

You can replace the 2N6430 with the 2N6431.
If you find an error please send an email to mail@el-component.com