2N6341G Bipolar Transistor
Characteristics of 2N6341G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 150 V
- Collector-Base Voltage, max: 180 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 25 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 30 to 120
- Transition Frequency, min: 40 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
- The 2N6341G is the lead-free version of the 2N6341 transistor
Pinout of 2N6341G
Replacement and Equivalent for 2N6341G transistor
If you find an error please send an email to mail@el-component.com