2N6079 Bipolar Transistor
Characteristics of 2N6079 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 350 V
- Collector-Base Voltage, max: 375 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 7 A
- Collector Dissipation: 45 W
- DC Current Gain (hfe): 12 to 70
- Transition Frequency, min: 7 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-66
Pinout of 2N6079
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