2N6052 Bipolar Transistor
Characteristics of 2N6052 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -12 A
- Collector Dissipation: 150 W
- DC Current Gain (hfe): 750 to 18000
- Transition Frequency, min: 4 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
Pinout of 2N6052
Complementary NPN transistor
Replacement and Equivalent for 2N6052 transistor
Lead-free Version
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