2N6029 Bipolar Transistor

Characteristics of 2N6029 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -16 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 25 to 100
  • Transition Frequency, min: 1 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N6029

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N6029 is the 2N5629.

Replacement and Equivalent for 2N6029 transistor

You can replace the 2N6029 with the BD318, MJ15004 or MJ15004G.
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