2N5830 Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 100 V
• Collector-Base Voltage, max: 120 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 0.6 A
• Collector Dissipation: 0.625 W
• DC Current Gain (h_fe): 80 to 500
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-92

The 2N5830 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.